SIS452DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Power Dissipation :

3.8W

Series :

TrenchFET®

Rise Time :

12ns

Number of Pins :

8

Turn On Delay Time :

20 ns

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Package / Case :

PowerPAK® 1212-8

Transistor Element Material :

SILICON

Mount :

Surface Mount

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Terminal Form :

C BEND

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

Unknown

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Terminal Position :

Dual

Fall Time (Typ) :

10 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Turn-Off Delay Time :

25 ns

Pin Count :

8

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 6V

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Drain to Source Breakdown Voltage :

12V

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Threshold Voltage :

1.2V

Published :

2016

Avalanche Energy Rating (Eas) :

45 mJ

Factory Lead Time :

15 Weeks

Number of Elements :

1

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

35A

FET Type :

N-Channel

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

3.8W Ta 52W Tc

Rds On (Max) @ Id, Vgs :

3.25m Ω @ 20A, 10V

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

5

Radiation Hardening :

No

Terminal Finish :

MATTE TIN

ECCN Code :

EAR99

JESD-30 Code :

S-PDSO-C5