SIS448DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Series :

TrenchFET®

Number of Channels :

1

Terminal Finish :

MATTE TIN

Mount :

Surface Mount

Number of Terminations :

5

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Published :

2015

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

5.6m Ω @ 10A, 10V

Power Dissipation-Max :

3.7W Ta 52W Tc

Avalanche Energy Rating (Eas) :

20 mJ

Threshold Voltage :

1V

Package / Case :

PowerPAK® 1212-8

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Drain to Source Breakdown Voltage :

30V

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Case Connection :

DRAIN

Pin Count :

8

Terminal Form :

C BEND

Radiation Hardening :

No

Power Dissipation :

3.7W

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

70A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

35A

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

35A Tc

JESD-30 Code :

S-PDSO-C5

Input Capacitance (Ciss) (Max) @ Vds :

1575pF @ 15V

Drain-source On Resistance-Max :

0.0056Ohm

REACH SVHC :

Unknown