SIS444DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

3065pF @ 15V

Case Connection :

DRAIN

Number of Channels :

1

Current - Continuous Drain (Id) @ 25°C :

35A Tc

DS Breakdown Voltage-Min :

30V

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

20 mJ

Terminal Form :

C BEND

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

Unknown

Mount :

Surface Mount

Power Dissipation-Max :

52W Tc

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-C5

Number of Terminations :

5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

70A

Turn-Off Delay Time :

33 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pin Count :

8

Drain to Source Voltage (Vdss) :

30V

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.0033Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

14 ns

Package / Case :

PowerPAK® 1212-8

Continuous Drain Current (ID) :

35A

Gate Charge (Qg) (Max) @ Vgs :

102nC @ 10V

ECCN Code :

EAR99

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

8 ns

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Published :

2015

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 10A, 10V

Power Dissipation :

3.7W

Number of Pins :

8

Number of Elements :

1

Factory Lead Time :

14 Weeks

Rise Time :

13ns