SIS443DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn) - annealed

Drain to Source Breakdown Voltage :

-40V

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Cut Tape (CT)

Threshold Voltage :

-1V

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1

Package / Case :

PowerPAK® 1212-8

JESD-30 Code :

S-PDSO-C5

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

40V

JESD-609 Code :

e3

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

135nC @ 10V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Vgs (Max) :

±20V

Turn On Delay Time :

12 ns

Turn-Off Delay Time :

48 ns

Fall Time (Typ) :

10 ns

Max Junction Temperature (Tj) :

150°C

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

0.035A

Number of Terminations :

5

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Published :

2013

Height :

1.1684mm

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

C BEND

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

11.7m Ω @ 15A, 10V

Power Dissipation :

3.7W

Power Dissipation-Max :

3.7W Ta 52W Tc

Factory Lead Time :

14 Weeks

Continuous Drain Current (ID) :

-13.3A

Number of Elements :

1

Rise Time :

10ns

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

ECCN Code :

EAR99

Number of Pins :

8

Input Capacitance (Ciss) (Max) @ Vds :

4370pF @ 20V

REACH SVHC :

Unknown

Series :

TrenchFET®