SIS439DNT-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

2135pF @ 15V

Number of Terminations :

5

Terminal Form :

C BEND

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

38 ns

Series :

TrenchFET®

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

PowerPAK® 1212-8S

Published :

2013

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

11m Ω @ 14A, 10V

Operating Temperature :

-50°C~150°C TJ

Turn-Off Delay Time :

27 ns

Current - Continuous Drain (Id) @ 25°C :

50A Tc

ECCN Code :

EAR99

JESD-30 Code :

S-PDSO-C5

Continuous Drain Current (ID) :

50A

Operating Mode :

ENHANCEMENT MODE

Rise Time :

33ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.8V @ 250μA

Drain to Source Voltage (Vdss) :

30V

Number of Pins :

8

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

Power Dissipation-Max :

3.8W Ta 52.1W Tc

Number of Channels :

1

FET Type :

P-Channel

Drain to Source Breakdown Voltage :

-30V

REACH SVHC :

Unknown

Radiation Hardening :

No

Mount :

Surface Mount

Number of Elements :

1

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

90A

Fall Time (Typ) :

12 ns

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount