SIS436DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Mount :

Surface Mount

Power Dissipation :

3.5W

Input Capacitance (Ciss) (Max) @ Vds :

855pF @ 10V

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

32A

Drain to Source Voltage (Vdss) :

25V

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Width :

3.05mm

Turn On Delay Time :

15 ns

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

10 ns

Number of Pins :

8

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Height :

1.04mm

Number of Terminations :

5

Time@Peak Reflow Temperature-Max (s) :

40

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Number of Channels :

1

Operating Mode :

ENHANCEMENT MODE

Length :

3.05mm

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

TrenchFET®

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Terminal Form :

C BEND

Rise Time :

12ns

Packaging :

Tape and Reel (TR)

Terminal Finish :

MATTE TIN

Vgs (Max) :

±20V

FET Type :

N-Channel

Radiation Hardening :

No

Power Dissipation-Max :

3.5W Ta 27.7W Tc

DS Breakdown Voltage-Min :

25V

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 10A, 10V

Published :

2016

Peak Reflow Temperature (Cel) :

260

Resistance :

4.5mOhm

Mounting Type :

Surface Mount

Factory Lead Time :

13 Weeks

Pbfree Code :

yes

Terminal Position :

Dual

Package / Case :

PowerPAK® 1212-8

JESD-30 Code :

S-XDSO-C5

Turn-Off Delay Time :

15 ns

Transistor Application :

SWITCHING

Pin Count :

8

Continuous Drain Current (ID) :

16A