SIHA6N80E-GE3

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Mfr.Part #
SIHA6N80E-GE3
Manufacturer
Vishay
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 800V 5.4A TO220
Stock
744
In Stock :
744

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C~150°C TJ
Current - Continuous Drain (Id) @ 25°C :
5.4A Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
800V
Vgs(th) (Max) @ Id :
4V @ 250µA
Published :
2018
Packaging :
Tube
Power Dissipation-Max :
31W Tc
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
940mOhm @ 3A, 10V
Drain to Source Resistance :
820MOhm
Series :
E
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS Status :
ROHS3 Compliant
Vgs (Max) :
±30V
Gate Charge (Qg) (Max) @ Vgs :
44nC @ 10V
Package / Case :
TO-220-3 Full Pack
Factory Lead Time :
18 Weeks
Supplier Device Package :
TO-220 Full Pack
Mounting Type :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
827pF @ 100V
Datasheets
SIHA6N80E-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SIHA6N80E-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3 Full Pack, Mounting Type:Through Hole, SIHA6N80E-GE3 pinout, SIHA6N80E-GE3 datasheet PDF, SIHA6N80E-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SIHA6N80E-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SIHA6N80E-GE3


N-Channel Tube 940mOhm @ 3A, 10V ±30V 827pF @ 100V 44nC @ 10V 800V TO-220-3 Full Pack

SIHA6N80E-GE3 Overview


A device's maximal input capacitance is 827pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 820mOhm.This transistor requires a 800V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

SIHA6N80E-GE3 Features


single MOSFETs transistor is 820mOhm
a 800V drain to source voltage (Vdss)


SIHA6N80E-GE3 Applications


There are a lot of Vishay Siliconix
SIHA6N80E-GE3 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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