SIHA12N50E-E3
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- Mfr.Part #
- SIHA12N50E-E3
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 10.5A TO220
- Stock
- 1,000
- In Stock ：
- 1,000
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-220-3 Full Pack
- Resistance :
- 330mOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 886pF @ 100V
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- FET Type :
- N-Channel
- Mount :
- Through Hole
- Power Dissipation-Max :
- 32W Tc
- Rds On Max :
- 380 mΩ
- Drain to Source Breakdown Voltage :
- 550V
- Drain to Source Voltage (Vdss) :
- 500V
- Min Operating Temperature :
- -55°C
- Published :
- 2001
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance :
- 886pF
- Number of Pins :
- 3
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Max Operating Temperature :
- 150°C
- Current - Continuous Drain (Id) @ 25°C :
- 10.5A Tc
- Threshold Voltage :
- 4V
- Continuous Drain Current (ID) :
- 10.5A
- Vgs (Max) :
- ±30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 380mOhm @ 6A, 10V
- Drain to Source Resistance :
- 380mOhm
- REACH SVHC :
- Unknown
- Supplier Device Package :
- TO-220 Full Pack
- Weight :
- 6.000006g
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 18 Weeks
- Datasheets
- SIHA12N50E-E3
N-Channel Tube 380mOhm @ 6A, 10V ±30V 886pF @ 100V 50nC @ 10V 500V TO-220-3 Full Pack
SIHA12N50E-E3 Overview
A device's maximum input capacitance is 886pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 10.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=550V, and this device has a drain-to-source breakdown voltage of 550V voltage.The Drain-to-Source Resistance (DTS) of a MOSFET is 380mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
SIHA12N50E-E3 Features
a continuous drain current (ID) of 10.5A
a drain-to-source breakdown voltage of 550V voltage
single MOSFETs transistor is 380mOhm
a threshold voltage of 4V
a 500V drain to source voltage (Vdss)
SIHA12N50E-E3 Applications
There are a lot of Vishay Siliconix
SIHA12N50E-E3 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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