SIHA11N80E-GE3

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Mfr.Part #
SIHA11N80E-GE3
Manufacturer
Vishay
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 800V 12A TO220
Stock
2,334
In Stock :
2,334

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Drain to Source Resistance :
380mOhm
Power Dissipation-Max :
34W Tc
Series :
E
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Through Hole
Vgs(th) (Max) @ Id :
4V @ 250µA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package / Case :
TO-220-3 Full Pack
Vgs (Max) :
±30V
Supplier Device Package :
TO-220 Full Pack
Current - Continuous Drain (Id) @ 25°C :
12A Tc
Drain to Source Voltage (Vdss) :
800V
RoHS Status :
ROHS3 Compliant
Input Capacitance (Ciss) (Max) @ Vds :
1670pF @ 100V
Rds On (Max) @ Id, Vgs :
440mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs :
88nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Factory Lead Time :
14 Weeks
Datasheets
SIHA11N80E-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SIHA11N80E-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-220-3 Full Pack, SIHA11N80E-GE3 pinout, SIHA11N80E-GE3 datasheet PDF, SIHA11N80E-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SIHA11N80E-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SIHA11N80E-GE3


N-Channel Tube 440mOhm @ 5.5A, 10V ±30V 1670pF @ 100V 88nC @ 10V 800V TO-220-3 Full Pack

SIHA11N80E-GE3 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1670pF @ 100V. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 380mOhm. Operating this transistor requires a 800V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

SIHA11N80E-GE3 Features


single MOSFETs transistor is 380mOhm
a 800V drain to source voltage (Vdss)


SIHA11N80E-GE3 Applications


There are a lot of Vishay Siliconix
SIHA11N80E-GE3 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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