SIHA14N60E-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

35 ns

Transistor Element Material :

SILICON

Power Dissipation :

147W

Gate to Source Voltage (Vgs) :

30V

FET Type :

N-Channel

Height :

18.1mm

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Continuous Drain Current (ID) :

13A

Series :

E

Rds On (Max) @ Id, Vgs :

309m Ω @ 7A, 10V

Number of Channels :

1

Power Dissipation-Max :

147W Tc

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Pulsed Drain Current-Max (IDM) :

32A

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

No

Drain to Source Breakdown Voltage :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1205pF @ 100V

Turn On Delay Time :

15 ns

Drain-source On Resistance-Max :

0.309Ohm

Vgs (Max) :

±30V

Factory Lead Time :

18 Weeks

JESD-30 Code :

R-PSFM-T3

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Package / Case :

TO-220-3 Full Pack

Packaging :

Tube

Max Junction Temperature (Tj) :

150°C

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V