SIHA12N60E-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

4V

Transistor Application :

SWITCHING

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

Number of Terminations :

3

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

600V

Pulsed Drain Current-Max (IDM) :

27A

Package / Case :

TO-220-3 Full Pack

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Turn-Off Delay Time :

35 ns

REACH SVHC :

Unknown

Continuous Drain Current (ID) :

12A

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±30V

Turn On Delay Time :

14 ns

Weight :

6.000006g

Drain to Source Voltage (Vdss) :

600V

Rds On (Max) @ Id, Vgs :

380m Ω @ 6A, 10V

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

937pF @ 100V

Element Configuration :

Single

Case Connection :

Isolated

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

19 ns

Published :

2005

Transistor Element Material :

SILICON

Factory Lead Time :

18 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

19ns

Mount :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

33W Tc

Lead Free :

Lead Free

Number of Channels :

1

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Number of Elements :

1