SIHA12N50E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

-

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Reel

Package / Case :

TO-220-3 Full Pack

Channel Type :

N Channel

Number of Channels :

1 Channel

Gate Charge (Qg) (Max) @ Vgs :

50 nC @ 10 V

Drain to Source Voltage (Vdss) :

500 V

Current - Continuous Drain (Id) @ 25°C :

10.5A (Tc)

Mounting Style :

Through Hole

Power Dissipation :

32W

Power Dissipation (Max) :

32W (Tc)

RoHS :

Details

Transistor Type :

1 N-Channel

Drive Voltage (Max Rds On, Min Rds On) :

10V

Operating Temperature :

-55°C ~ 150°C (TJ)

Brand :

Vishay / Siliconix

Configuration :

Single

Product Status :

Active

Vgs (Max) :

±30V

Subcategory :

MOSFETs

Transistor Polarity :

N-Channel

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

380mOhm @ 6A, 10V

Product Category :

MOSFET

Package :

Cut Tape (CT)

Series :

-

Continuous Drain Current Id :

10.5A

FET Type :

N-Channel

Supplier Device Package :

TO-220 Full Pack

Input Capacitance (Ciss) (Max) @ Vds :

886 pF @ 100 V

Product Type :

MOSFET

Manufacturer :

Vishay

Qualification :

-