SIHA15N60E-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

6.000006g

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Drain to Source Voltage (Vdss) :

600V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

280m Ω @ 8A, 10V

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

76nC @ 10V

Mount :

Through Hole

Turn-Off Delay Time :

35 ns

Drain to Source Breakdown Voltage :

650V

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 100V

Power Dissipation-Max :

34W Tc

Rise Time :

51ns

REACH SVHC :

Unknown

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB

Continuous Drain Current (ID) :

15A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Published :

2014

Number of Pins :

3

Mounting Type :

Through Hole

Case Connection :

Isolated

Fall Time (Typ) :

33 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

4V

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

14 Weeks

Number of Terminations :

3

Packaging :

Tube

Drain-source On Resistance-Max :

0.28Ohm

FET Type :

N-Channel

Lead Free :

Lead Free

Package / Case :

TO-220-3 Full Pack

Turn On Delay Time :

17 ns

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Number of Elements :

1

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA