SIHA15N50E-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1162pF @ 100V

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

33W Tc

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3 Full Pack

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Transistor Application :

SWITCHING

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

280m Ω @ 7.5A, 10V

REACH SVHC :

Unknown

Pulsed Drain Current-Max (IDM) :

28A

Weight :

6.000006g

Transistor Element Material :

SILICON

Number of Elements :

1

Continuous Drain Current (ID) :

14.5A

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Vgs (Max) :

±30V

Factory Lead Time :

14 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Resistance :

243mOhm

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2009

Drain to Source Voltage (Vdss) :

500V

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4V @ 250µA

DS Breakdown Voltage-Min :

500V

Current - Continuous Drain (Id) @ 25°C :

14.5A Tc

Case Connection :

Isolated

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Mount :

Through Hole

Threshold Voltage :

4V