SIHA2N80E-GE3
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- Mfr.Part #
- SIHA2N80E-GE3
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 2.8A TO220
- Stock
- 26
- In Stock ：
- 26
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- E
- Gate Charge (Qg) (Max) @ Vgs :
- 19.6nC @ 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Power Dissipation-Max :
- 29W Tc
- Drain to Source Voltage (Vdss) :
- 800V
- Package / Case :
- TO-220-3 Full Pack
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 2.8A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 315pF @ 100V
- Rds On (Max) @ Id, Vgs :
- 2.75Ohm @ 1A, 10V
- FET Type :
- N-Channel
- Supplier Device Package :
- TO-220 Full Pack
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 18 Weeks
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- SIHA2N80E-GE3
N-Channel Tape & Reel (TR) 2.75Ohm @ 1A, 10V ±30V 315pF @ 100V 19.6nC @ 10V 800V TO-220-3 Full Pack
SIHA2N80E-GE3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 315pF @ 100V is its maximum input capacitance.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
SIHA2N80E-GE3 Features
a 800V drain to source voltage (Vdss)
SIHA2N80E-GE3 Applications
There are a lot of Vishay Siliconix
SIHA2N80E-GE3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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