SIHA25N50E-E3

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Mfr.Part #
SIHA25N50E-E3
Manufacturer
Vishay
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 500V 26A TO220
Stock
16,298
In Stock :
16,298

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
ROHS3 Compliant
Element Configuration :
Single
Rds On (Max) @ Id, Vgs :
145mOhm @ 12A, 10V
Package / Case :
TO-220-3 Full Pack
Rds On Max :
145 mΩ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Weight :
6.000006g
Input Capacitance :
1.98nF
Gate to Source Voltage (Vgs) :
20V
Mount :
Through Hole
Power Dissipation-Max :
35W Tc
Turn-Off Delay Time :
57 ns
Packaging :
Tube
Factory Lead Time :
18 Weeks
Supplier Device Package :
TO-220 Full Pack
Operating Temperature :
-55°C~150°C TJ
Fall Time (Typ) :
29 ns
Current - Continuous Drain (Id) @ 25°C :
26A Tc
Gate Charge (Qg) (Max) @ Vgs :
86nC @ 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Published :
2016
Drain to Source Voltage (Vdss) :
500V
FET Type :
N-Channel
Rise Time :
36ns
Continuous Drain Current (ID) :
26A
Min Operating Temperature :
-55°C
Drain to Source Breakdown Voltage :
500V
Input Capacitance (Ciss) (Max) @ Vds :
1980pF @ 100V
Turn On Delay Time :
19 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Type :
Through Hole
Drain to Source Resistance :
145mOhm
Number of Channels :
1
Resistance :
145mOhm
Vgs (Max) :
±30V
Max Operating Temperature :
150°C
Datasheets
SIHA25N50E-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SIHA25N50E-E3 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3 Full Pack, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Channels:1, SIHA25N50E-E3 pinout, SIHA25N50E-E3 datasheet PDF, SIHA25N50E-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SIHA25N50E-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SIHA25N50E-E3


N-Channel Tube 145mOhm @ 12A, 10V ±30V 1980pF @ 100V 86nC @ 10V 500V TO-220-3 Full Pack

SIHA25N50E-E3 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1980pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.As a result of its turn-off delay time, which is 57 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 145mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 19 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

SIHA25N50E-E3 Features


a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 57 ns
single MOSFETs transistor is 145mOhm
a 500V drain to source voltage (Vdss)


SIHA25N50E-E3 Applications


There are a lot of Vishay Siliconix
SIHA25N50E-E3 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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