SIHA24N65EF-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

65A

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

24A

Surface Mount :

No

Drain-source On Resistance-Max :

0.156Ohm

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Package / Case :

TO-220-3 Full Pack

Rds On (Max) @ Id, Vgs :

156m Ω @ 12A, 10V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tube

JEDEC-95 Code :

TO-220AB

Factory Lead Time :

21 Weeks

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

122nC @ 10V

DS Breakdown Voltage-Min :

650V

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Input Capacitance (Ciss) (Max) @ Vds :

2774pF @ 100V

Power Dissipation-Max :

39W Tc

Drain to Source Voltage (Vdss) :

650V

Transistor Element Material :

SILICON

Series :

E

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

691 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V