SIHA22N60E-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Vgs (Max) :

±30V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Gate Charge (Qg) (Max) @ Vgs :

86nC @ 10V

Mount :

Through Hole

Rise Time :

27ns

Turn On Delay Time :

18 ns

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

Number of Pins :

3

Transistor Element Material :

SILICON

Number of Elements :

1

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Factory Lead Time :

18 Weeks

Fall Time (Typ) :

35 ns

Threshold Voltage :

4V

Published :

2005

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

180m Ω @ 11A, 10V

Transistor Application :

SWITCHING

REACH SVHC :

Unknown

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-220-3 Full Pack

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

56A

Power Dissipation-Max :

35W Tc

Weight :

6.000006g

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

600V

Input Capacitance (Ciss) (Max) @ Vds :

1920pF @ 100V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

Isolated

Packaging :

Tube

Continuous Drain Current (ID) :

21A

Drain to Source Voltage (Vdss) :

600V

Turn-Off Delay Time :

66 ns

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ