SIHA21N80AEF-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

TO-220 Full Pack

Power Dissipation :

33W

Qualification :

-

Continuous Drain Current Id :

7A

Package / Case :

TO-220-3 Full Pack

Power Dissipation (Max) :

33W (Tc)

Number of Elements per Chip :

1

Product Status :

Active

Rds On (Max) @ Id, Vgs :

250mOhm @ 8.5A, 10V

Channel Type :

N

Drain to Source Voltage (Vdss) :

800 V

Operating Temperature :

-55°C ~ 150°C (TJ)

FET Type :

N-Channel

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Package :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

1511 pF @ 100 V

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

71 nC @ 10 V

Package Type :

TO-220 FP

Drive Voltage (Max Rds On, Min Rds On) :

10V

Vgs (Max) :

±30V

FET Feature :

-

Current - Continuous Drain (Id) @ 25°C :

7A (Tc)

MSL :

MSL 1 - Unlimited

Series :

-