SIHA21N65EF-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Supplier Device Package :

TO-220 Full Pack

Packaging :

Reel

Rds On (Max) @ Id, Vgs :

180mOhm @ 11A, 10V

Operating Temperature :

-55°C ~ 150°C (TJ)

Input Capacitance (Ciss) (Max) @ Vds :

2322 pF @ 100 V

Current - Continuous Drain (Id) @ 25°C :

21A (Tc)

Gate Charge (Qg) (Max) @ Vgs :

106 nC @ 10 V

Manufacturer :

Vishay

RoHS :

Details

Continuous Drain Current Id :

21

Drive Voltage (Max Rds On, Min Rds On) :

10V

Subcategory :

MOSFETs

Product Category :

MOSFET

Package / Case :

TO-220-3 Full Pack

Power Dissipation (Max) :

35W (Tc)

Vgs(th) (Max) @ Id :

4V @ 250µA

Channel Type :

N Channel

Product Status :

Active

Package :

Cut Tape (CT)

FET Type :

N-Channel

Mounting Type :

Through Hole

Brand :

Vishay / Siliconix

FET Feature :

-

Series :

-

Drain to Source Voltage (Vdss) :

650 V

Product Type :

MOSFET

Power Dissipation :

35

Qualification :

-