SIHA21N60EF-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

21 Weeks

Published :

2014

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

84nC @ 10V

Number of Elements :

1

Drain to Source Voltage (Vdss) :

600V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSFM-T3

Power Dissipation-Max :

35W Tc

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

367 mJ

Vgs (Max) :

±30V

Terminal Position :

Single

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

2030pF @ 100V

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-220-3 Full Pack

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

53A

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-220AB

Case Connection :

Isolated

Drain-source On Resistance-Max :

0.176Ohm

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

176m Ω @ 11A, 10V

DS Breakdown Voltage-Min :

600V

Continuous Drain Current (ID) :

21A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube