SIHA20N50E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

FET Feature :

-

Mounting Style :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs :

184mOhm @ 10A, 10V

Subcategory :

MOSFETs

Transistor Polarity :

N-Channel

Drain to Source Resistance :

160 mΩ

Minimum Operating Temperature :

- 55 C

Qualification :

-

Packaging :

MouseReel

Package / Case :

TO-220-3 Full Pack

Continuous Drain Current Id :

19

Channel Mode :

Enhancement

Number of Channels :

1 Channel

Input Capacitance (Ciss) (Max) @ Vds :

1640 pF @ 100 V

Maximum Operating Temperature :

+ 150 C

Channel Type :

N

Product Type :

MOSFET

Brand :

Vishay / Siliconix

Power Dissipation (Max) :

34W (Tc)

RoHS :

Details

Gate Charge (Qg) (Max) @ Vgs :

92 nC @ 10 V

Product Status :

Active

Technology :

Si

Drain to Source Voltage (Vdss) :

500 V

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

19A (Tc)

Power Dissipation :

34

MSL :

MSL 1 - Unlimited

Manufacturer :

Vishay

Product Category :

MOSFET

Series :

SiHA20N50E

Package :

Tape and Reel (TR);Cut Tape (CT);

Supplier Device Package :

TO-220 Full Pack

Drive Voltage (Max Rds On, Min Rds On) :

10V

Vgs (Max) :

±30V