SIHA20N50E-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Continuous Drain Current (ID) :

19A

Drain to Source Voltage (Vdss) :

500V

Transistor Application :

SWITCHING

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

204 mJ

Number of Channels :

1

Drain to Source Breakdown Voltage :

550V

Rds On (Max) @ Id, Vgs :

184m Ω @ 10A, 10V

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Published :

2017

Factory Lead Time :

18 Weeks

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 10V

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

Isolated

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

34W Tc

Package / Case :

TO-220-3 Full Pack

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±30V

Mount :

Through Hole

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

42A

REACH SVHC :

Unknown

Resistance :

160mOhm

Input Capacitance (Ciss) (Max) @ Vds :

1640pF @ 100V

Threshold Voltage :

4V