SIHA186N60EF-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

EF

Configuration :

Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Manufacturer :

Vishay

Channel Type :

N

Qualification :

-

Package Type :

TO-220

Mounting Style :

Through Hole

Drive Voltage (Max Rds On, Min Rds On) :

10V

Product Category :

MOSFET

Drain to Source Voltage (Vdss) :

600 V

Package :

Tube

Transistor Type :

1 N - Channel

FET Type :

N-Channel

Subcategory :

MOSFETs

Product Status :

Active

Pin Count :

3

Rise Time :

46 ns

FET Feature :

-

Operating Temperature :

-55°C ~ 150°C (TJ)

RoHS :

Details

Number of Channels :

1 Channel

Brand :

Vishay / Siliconix

Gate Charge (Qg) (Max) @ Vgs :

32 nC @ 10 V

Base Product Number :

SIHA186

Mounting Type :

Through Hole

Vgs (Max) :

±30V

Power Dissipation :

156W

Packaging :

Tube

Power Dissipation (Max) :

156W (Tc)

Product Type :

MOSFET

Transistor Polarity :

N-Channel

Channel Mode :

Enhancement

Number of Elements per Chip :

1

Input Capacitance (Ciss) (Max) @ Vds :

1081 pF @ 100 V

MSL :

MSL 1 - Unlimited

Minimum Operating Temperature :

- 55 C

Maximum Operating Temperature :

+ 150 C

Package / Case :

TO-220-3 Full Pack

Rds On (Max) @ Id, Vgs :

193mOhm @ 9.5A, 10V

Current - Continuous Drain (Id) @ 25°C :

8.4A (Tc)

Supplier Device Package :

TO-220 Full Pack

Continuous Drain Current Id :

8.4A