SIHA17N80E-E3
- Mfr.Part #
- SIHA17N80E-E3
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CHANNEL 800V 15A TO220
- Stock
- 4
- In Stock :
- 4
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Channels :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 15A
- Rds On (Max) @ Id, Vgs :
- 290mOhm @ 8.5A, 10V
- Package / Case :
- TO-220-3 Full Pack
- Drain to Source Voltage (Vdss) :
- 800V
- Vgs (Max) :
- ±30V
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tube
- Max Junction Temperature (Tj) :
- 150°C
- Turn-Off Delay Time :
- 71 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 122nC @ 10V
- Factory Lead Time :
- 18 Weeks
- Drain to Source Breakdown Voltage :
- 800V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Max Operating Temperature :
- 150°C
- Min Operating Temperature :
- -55°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 2408pF @ 100V
- FET Type :
- N-Channel
- Series :
- E
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Height :
- 18.1mm
- Mounting Type :
- Through Hole
- Turn On Delay Time :
- 22 ns
- Power Dissipation-Max :
- 35W Tc
- Drain to Source Resistance :
- 250mOhm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Supplier Device Package :
- TO-220 Full Pack
- Power Dissipation :
- 35W
- Gate to Source Voltage (Vgs) :
- 30V
- Datasheets
- SIHA17N80E-E3
N-Channel Tube 290mOhm @ 8.5A, 10V ±30V 2408pF @ 100V 122nC @ 10V 800V TO-220-3 Full Pack
SIHA17N80E-E3 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2408pF @ 100V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 15A.With a drain-source breakdown voltage of 800V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 800V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 71 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 250mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 22 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 800V.Using drive voltage (10V) reduces this device's overall power consumption.
SIHA17N80E-E3 Features
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 71 ns
single MOSFETs transistor is 250mOhm
a 800V drain to source voltage (Vdss)
SIHA17N80E-E3 Applications
There are a lot of Vishay Siliconix
SIHA17N80E-E3 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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