SIHA15N65E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

18 ns

Gate to Source Voltage (Vgs) :

30V

Factory Lead Time :

18 Weeks

Series :

E

Continuous Drain Current (ID) :

15A

Drain to Source Breakdown Voltage :

650V

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Package / Case :

TO-220-3 Full Pack

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

96nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

2460pF @ 100V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

34W Tc

Height :

18.1mm

Max Junction Temperature (Tj) :

150°C

Number of Channels :

1

Vgs (Max) :

±30V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

48 ns

Power Dissipation :

34W

Rds On (Max) @ Id, Vgs :

280m Ω @ 8A, 10V