SI7983DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Turn-Off Delay Time :

390 ns

Vgs(th) (Max) @ Id :

1V @ 600μA

Turn On Delay Time :

35 ns

Rise Time :

60ns

Rds On (Max) @ Id, Vgs :

17mOhm @ 12A, 4.5V

Supplier Device Package :

PowerPAK® SO-8 Dual

Continuous Drain Current (ID) :

60A

Drain to Source Voltage (Vdss) :

20V

Length :

4.9mm

Base Part Number :

SI7983

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

1.4W

Package / Case :

PowerPAK® SO-8 Dual

FET Type :

2 P-Channel (Dual)

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

60 ns

Min Operating Temperature :

-55°C

Max Power Dissipation :

1.4W

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Weight :

506.605978mg

Number of Pins :

8

Mount :

Surface Mount

Height :

1.04mm

Published :

2011

Rds On Max :

17 mΩ

Width :

5.89mm

Series :

TrenchFET®

Gate to Source Voltage (Vgs) :

8V

Max Operating Temperature :

150°C

Drain to Source Breakdown Voltage :

-20V

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

7.7A

Element Configuration :

Dual

Number of Channels :

2

FET Feature :

Logic Level Gate

Gate Charge (Qg) (Max) @ Vgs :

74nC @ 4.5V

Drain to Source Resistance :

17mOhm