SI7980DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pbfree Code :

yes

Radiation Hardening :

No

Max Power Dissipation :

21.9W

Pin Count :

8

Input Capacitance (Ciss) (Max) @ Vds :

1010pF @ 10V

Gate to Source Voltage (Vgs) :

16V

Transistor Application :

SWITCHING

Number of Pins :

8

Height :

1.04mm

Drain to Source Breakdown Voltage :

20V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Series :

TrenchFET®

Pulsed Drain Current-Max (IDM) :

30A

Element Configuration :

Dual

FET Feature :

Standard

Drain to Source Voltage (Vdss) :

20V

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Power - Max :

19.8W 21.9W

Fall Time (Typ) :

10 ns

Rds On (Max) @ Id, Vgs :

22m Ω @ 5A, 10V

JESD-609 Code :

e3

Weight :

506.605978mg

Mounting Type :

Surface Mount

FET Type :

2 N-Channel (Half Bridge)

Terminal Form :

C BEND

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

8A

Turn On Delay Time :

18 ns

Case Connection :

DRAIN

Length :

4.9mm

Continuous Drain Current (ID) :

8A

Number of Elements :

2

Base Part Number :

SI7980

Factory Lead Time :

12 Weeks

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-XDSO-C6

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Mount :

Surface Mount

Rise Time :

18ns

Packaging :

Tape and Reel (TR)

Power Dissipation :

3.4W

Number of Channels :

2

Width :

5.89mm

Operating Temperature :

-55°C~150°C TJ

Published :

2015

Peak Reflow Temperature (Cel) :

260

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

PowerPAK® SO-8 Dual

ECCN Code :

EAR99

Turn-Off Delay Time :

25 ns