SI7964DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Fall Time (Typ) :

15 ns

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Series :

TrenchFET®

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

60V

Package / Case :

PowerPAK® SO-8 Dual

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Base Part Number :

SI7964

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Element Configuration :

Dual

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Number of Pins :

8

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Pin Count :

8

Peak Reflow Temperature (Cel) :

260

Terminal Form :

C BEND

Rise Time :

15ns

Rds On (Max) @ Id, Vgs :

23m Ω @ 9.6A, 10V

FET Type :

2 N-Channel (Dual)

Published :

2011

Current - Continuous Drain (Id) @ 25°C :

6.1A

Pulsed Drain Current-Max (IDM) :

40A

Threshold Voltage :

4.5V

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

2

Max Power Dissipation :

1.4W

Turn-Off Delay Time :

50 ns

Power Dissipation :

1.4W

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Finish :

Matte Tin (Sn)

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-XDSO-C6

FET Feature :

Standard

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

6.1A

Turn On Delay Time :

20 ns

Continuous Drain Current (ID) :

9.6A

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

31 mJ