SI7962DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~150°C TJ

Published :

2016

Mount :

Surface Mount

Transistor Application :

SWITCHING

Fall Time (Typ) :

15 ns

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.017Ohm

ECCN Code :

EAR99

Case Connection :

DRAIN

Pin Count :

8

Rds On (Max) @ Id, Vgs :

17m Ω @ 11.1A, 10V

Base Part Number :

SI7962

Terminal Form :

C BEND

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Package / Case :

PowerPAK® SO-8 Dual

Drain Current-Max (Abs) (ID) :

7.1A

Max Power Dissipation :

1.4W

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

1.4W

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Standard

Factory Lead Time :

13 Weeks

Number of Terminations :

6

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Series :

TrenchFET®

RoHS Status :

ROHS3 Compliant

FET Type :

2 N-Channel (Dual)

JESD-30 Code :

R-PDSO-C6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Pbfree Code :

yes

Number of Pins :

8

Turn-Off Delay Time :

55 ns

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

11.1A

Current - Continuous Drain (Id) @ 25°C :

7.1A

Element Configuration :

Dual

Drain to Source Breakdown Voltage :

40V

Mounting Type :

Surface Mount

Rise Time :

15ns