SI7956DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Form :

C BEND

Case Connection :

DRAIN

FET Type :

2 N-Channel (Dual)

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

1.4W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

Factory Lead Time :

14 Weeks

Turn-Off Delay Time :

18 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Element Configuration :

Dual

Number of Pins :

8

Drain-source On Resistance-Max :

0.105Ohm

Rds On (Max) @ Id, Vgs :

105m Ω @ 4.1A, 10V

Number of Terminations :

6

FET Feature :

Logic Level Gate

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

13 ns

Weight :

506.605978mg

Rise Time :

36ns

Drain to Source Voltage (Vdss) :

150V

Contact Plating :

Tin

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Operating Mode :

ENHANCEMENT MODE

Package / Case :

PowerPAK® SO-8 Dual

Transistor Application :

SWITCHING

Max Power Dissipation :

1.4W

Pbfree Code :

yes

Published :

2016

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

150V

Gate to Source Voltage (Vgs) :

20V

Pin Count :

8

Mount :

Surface Mount

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

2.6A

Series :

TrenchFET®

Base Part Number :

SI7956

JESD-30 Code :

R-XDSO-C6

Fall Time (Typ) :

50 ns

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free