SI7949DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mount :

Surface Mount

Turn On Delay Time :

8 ns

Threshold Voltage :

-3V

Height :

1.04mm

Rise Time :

9ns

Number of Pins :

8

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

60V

Width :

5.89mm

Lead Free :

Lead Free

Package / Case :

PowerPAK® SO-8 Dual

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

C BEND

Base Part Number :

SI7949

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Continuous Drain Current (ID) :

-5A

Element Configuration :

Dual

Weight :

506.605978mg

Factory Lead Time :

14 Weeks

Current - Continuous Drain (Id) @ 25°C :

3.2A

Resistance :

64mOhm

Number of Terminations :

6

Drain to Source Breakdown Voltage :

-60V

Power Dissipation :

1.5W

Rds On (Max) @ Id, Vgs :

64m Ω @ 5A, 10V

Time@Peak Reflow Temperature-Max (s) :

40

Fall Time (Typ) :

9 ns

Contact Plating :

Tin

Max Power Dissipation :

1.5W

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

65 ns

Number of Elements :

2

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®

Pin Count :

8

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-XDSO-C6

REACH SVHC :

No SVHC

FET Feature :

Logic Level Gate

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Peak Reflow Temperature (Cel) :

260

Length :

4.9mm

Published :

2011

FET Type :

2 P-Channel (Dual)

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

3V @ 250µA