SI7948DP-T1-GE3
- Mfr.Part #
- SI7948DP-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8 Dual
- Datasheet
- Download
- Description
- MOSFET 2N-CH 60V 3A PPAK SO-8
- Stock
- 11,776
- In Stock :
- 11,776
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Supplier Device Package :
- PowerPAK® SO-8 Dual
- Current - Continuous Drain (Id) @ 25°C :
- 3A
- Rds On (Max) @ Id, Vgs :
- 75mOhm @ 4.6A, 10V
- Max Power Dissipation :
- 1.4W
- Weight :
- 506.605978mg
- Turn On Delay Time :
- 7 ns
- Drain to Source Resistance :
- 75mOhm
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 8
- Width :
- 5.89mm
- Fall Time (Typ) :
- 8 ns
- Number of Elements :
- 2
- Series :
- TrenchFET®
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- 2 N-Channel (Dual)
- Min Operating Temperature :
- -55°C
- Turn-Off Delay Time :
- 15 ns
- Mount :
- Surface Mount
- FET Feature :
- Logic Level Gate
- Published :
- 2012
- Power Dissipation :
- 1.4W
- Package / Case :
- PowerPAK® SO-8 Dual
- Power - Max :
- 1.4W
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Rise Time :
- 8ns
- Rds On Max :
- 75 mΩ
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 60V
- Length :
- 4.9mm
- Base Part Number :
- SI7948
- Number of Channels :
- 2
- Continuous Drain Current (ID) :
- 4.6A
- Element Configuration :
- Dual
- Drain to Source Breakdown Voltage :
- 60V
- Height :
- 1.04mm
- Max Operating Temperature :
- 150°C
- Datasheets
- SI7948DP-T1-GE3
SI7948DP-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available at
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