SI7946DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Element Configuration :

Dual

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-XDSO-C6

Number of Pins :

8

Published :

2016

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

AVALANCHE RATED

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Turn-Off Delay Time :

30 ns

Avalanche Energy Rating (Eas) :

4 mJ

Max Power Dissipation :

1.4W

Base Part Number :

SI7946

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn On Delay Time :

11 ns

Pin Count :

8

Pulsed Drain Current-Max (IDM) :

10A

Mount :

Surface Mount

Transistor Element Material :

SILICON

Case Connection :

DRAIN

JESD-609 Code :

e3

Number of Elements :

2

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Mounting Type :

Surface Mount

Rise Time :

15ns

Continuous Drain Current (ID) :

2.1A

Rds On (Max) @ Id, Vgs :

150m Ω @ 3.3A, 10V

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Breakdown Voltage :

150V

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

150V

Fall Time (Typ) :

20 ns

RoHS Status :

ROHS3 Compliant

Package / Case :

PowerPAK® SO-8 Dual

Peak Reflow Temperature (Cel) :

260

Series :

TrenchFET®

Number of Terminations :

6

Drain-source On Resistance-Max :

0.15Ohm

Terminal Form :

C BEND

Power Dissipation :

1.4W

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Terminal Finish :

PURE MATTE TIN

FET Feature :

Logic Level Gate

Radiation Hardening :

No