SI7946DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

6

Mounting Type :

Surface Mount

Series :

TrenchFET®

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

30 ns

Drain to Source Breakdown Voltage :

150V

Rds On (Max) @ Id, Vgs :

150m Ω @ 3.3A, 10V

Lead Free :

Lead Free

Fall Time (Typ) :

20 ns

Published :

2011

Current - Continuous Drain (Id) @ 25°C :

2.1A

Time@Peak Reflow Temperature-Max (s) :

40

Additional Feature :

AVALANCHE RATED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Rise Time :

15ns

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Element Configuration :

Dual

JESD-30 Code :

R-XDSO-C6

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

FET Feature :

Logic Level Gate

Case Connection :

DRAIN

Terminal Form :

C BEND

Nominal Vgs :

4 V

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

3.3A

FET Type :

2 N-Channel (Dual)

Avalanche Energy Rating (Eas) :

4 mJ

Mount :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

PowerPAK® SO-8 Dual

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Turn On Delay Time :

11 ns

Pbfree Code :

yes

Number of Pins :

8

Pulsed Drain Current-Max (IDM) :

10A

Operating Mode :

ENHANCEMENT MODE

Pin Count :

8

Base Part Number :

SI7946

REACH SVHC :

Unknown

Resistance :

150mOhm

Max Power Dissipation :

1.4W

Power Dissipation :

1.4W