SI7945DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

1.4W

Terminal Form :

C BEND

Number of Terminations :

6

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)

Base Part Number :

SI7945

Nominal Vgs :

-3 V

Element Configuration :

Dual

Peak Reflow Temperature (Cel) :

260

Series :

TrenchFET®

Transistor Element Material :

SILICON

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

74nC @ 10V

Turn On Delay Time :

15 ns

Rise Time :

15ns

Turn-Off Delay Time :

130 ns

Rds On (Max) @ Id, Vgs :

20m Ω @ 10.9A, 10V

Current - Continuous Drain (Id) @ 25°C :

7A

Transistor Application :

SWITCHING

Number of Pins :

8

FET Feature :

Logic Level Gate

Vgs(th) (Max) @ Id :

3V @ 250µA

Lead Free :

Lead Free

REACH SVHC :

Unknown

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-XDSO-C6

Published :

2016

Resistance :

20mOhm

Continuous Drain Current (ID) :

-10.9A

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

30V

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Radiation Hardening :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Fall Time (Typ) :

15 ns

FET Type :

2 P-Channel (Dual)

Power Dissipation :

1.4W

JESD-609 Code :

e3

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

7A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

30V

Package / Case :

PowerPAK® SO-8 Dual

Time@Peak Reflow Temperature-Max (s) :

40

Gate to Source Voltage (Vgs) :

20V

Pin Count :

8

ECCN Code :

EAR99