SI7942DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

6

Terminal Finish :

Matte Tin (Sn)

Power Dissipation :

1.4W

Pin Count :

8

Fall Time (Typ) :

20 ns

Factory Lead Time :

14 Weeks

REACH SVHC :

Unknown

FET Type :

2 N-Channel (Dual)

FET Feature :

Logic Level Gate

Turn-Off Delay Time :

35 ns

Transistor Application :

SWITCHING

Number of Elements :

2

Case Connection :

DRAIN

JESD-30 Code :

R-XDSO-C6

Nominal Vgs :

4 V

Resistance :

49mOhm

ECCN Code :

EAR99

Length :

4.9mm

Continuous Drain Current (ID) :

5.9A

Rds On (Max) @ Id, Vgs :

49m Ω @ 5.9A, 10V

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Weight :

506.605978mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

15ns

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Width :

5.89mm

Base Part Number :

SI7942

Number of Pins :

8

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Number of Channels :

2

Element Configuration :

Dual

Series :

TrenchFET®

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2015

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

Height :

1.04mm

Current - Continuous Drain (Id) @ 25°C :

3.8A

Dual Supply Voltage :

100V

Termination :

SMD/SMT

Terminal Form :

C BEND

Package / Case :

PowerPAK® SO-8 Dual

Turn On Delay Time :

15 ns

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

100V

Peak Reflow Temperature (Cel) :

260

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

1.4W

Operating Temperature :

-55°C~150°C TJ