SI7940DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mount :

Surface Mount

FET Feature :

Logic Level Gate

Element Configuration :

Dual

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

50 ns

Gate to Source Voltage (Vgs) :

8V

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Power Dissipation :

1.4W

Number of Terminations :

6

Continuous Drain Current (ID) :

11.8A

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Base Part Number :

SI7940

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-XDSO-C6

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

7.6A

Series :

TrenchFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Pin Count :

8

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Max Power Dissipation :

1.4W

Time@Peak Reflow Temperature-Max (s) :

40

Rise Time :

50ns

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

17m Ω @ 11.8A, 4.5V

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

12V

Drain Current-Max (Abs) (ID) :

7.6A

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Published :

2014

Turn On Delay Time :

30 ns

Number of Elements :

2

Number of Pins :

8

Turn-Off Delay Time :

60 ns

Terminal Finish :

MATTE TIN

Drain-source On Resistance-Max :

0.017Ohm

FET Type :

2 N-Channel (Dual)

Terminal Form :

C BEND

Package / Case :

PowerPAK® SO-8 Dual

Case Connection :

DRAIN