SI7940DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

17m Ω @ 11.8A, 4.5V

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

1.5V @ 250µA

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Published :

2016

Time@Peak Reflow Temperature-Max (s) :

40

Mount :

Surface Mount

Pin Count :

8

Packaging :

Tape and Reel (TR)

Resistance :

17mOhm

Terminal Finish :

Matte Tin (Sn)

Pbfree Code :

yes

Turn On Delay Time :

30 ns

Gate to Source Voltage (Vgs) :

8V

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

12V

Fall Time (Typ) :

50 ns

FET Feature :

Logic Level Gate

Lead Free :

Lead Free

JESD-30 Code :

R-XDSO-C6

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

1.4W

FET Type :

2 N-Channel (Dual)

Rise Time :

50ns

Number of Terminations :

6

Case Connection :

DRAIN

Package / Case :

PowerPAK® SO-8 Dual

Turn-Off Delay Time :

60 ns

Element Configuration :

Dual

Number of Pins :

8

Terminal Form :

C BEND

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Continuous Drain Current (ID) :

7.6A

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Power Dissipation :

1.4W

Series :

TrenchFET®

Drain to Source Breakdown Voltage :

12V

Base Part Number :

SI7940

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount