SI7938DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 18.5A, 10V

Series :

TrenchFET®

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

C BEND

Number of Elements :

2

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

40V

Qualification Status :

Not Qualified

FET Type :

2 N-Channel (Dual)

Reach Compliance Code :

Unknown

Number of Channels :

2

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Turn On Delay Time :

11 ns

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

15 ns

Factory Lead Time :

14 Weeks

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

2300pF @ 20V

Base Part Number :

SI7938

Nominal Vgs :

2.5 V

JESD-30 Code :

R-XDSO-C6

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Case Connection :

DRAIN

Threshold Voltage :

2.5V

Package / Case :

PowerPAK® SO-8 Dual

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Manufacturer Package Identifier :

S17-0173-DUAL

Terminal Finish :

Matte Tin (Sn)

Max Junction Temperature (Tj) :

150°C

Max Power Dissipation :

46W

Element Configuration :

Dual

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

40V

FET Feature :

Standard

Height :

1.17mm

Operating Temperature :

-55°C~150°C TJ

Published :

2014

Turn-Off Delay Time :

33 ns

Continuous Drain Current (ID) :

60A

Weight :

506.605978mg

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

3.5W

Rise Time :

19ns

Transistor Element Material :

SILICON

Pin Count :

8