SI7922DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power Dissipation :

1.3W

Pin Count :

8

DS Breakdown Voltage-Min :

100V

Base Part Number :

SI7922

JESD-30 Code :

S-XDSO-C6

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Width :

3.05mm

Pbfree Code :

yes

Factory Lead Time :

15 Weeks

Fall Time (Typ) :

11 ns

Current - Continuous Drain (Id) @ 25°C :

1.8A

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Voltage (Vdss) :

100V

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Height :

1.04mm

Turn On Delay Time :

7 ns

Element Configuration :

Dual

Length :

3.05mm

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

3.5V @ 250µA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

8 ns

Number of Pins :

8

Rise Time :

11ns

Case Connection :

DRAIN

Package / Case :

PowerPAK® 1212-8 Dual

Transistor Element Material :

SILICON

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

195m Ω @ 2.5A, 10V

Resistance :

195mOhm

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

Pulsed Drain Current-Max (IDM) :

10A

FET Feature :

Logic Level Gate

Terminal Form :

C BEND

Published :

2016

Series :

TrenchFET®

Max Power Dissipation :

1.3W

Number of Terminations :

6

FET Type :

2 N-Channel (Dual)

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

2.5A

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

JESD-609 Code :

e3