SI7922DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Form :

C BEND

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

1.8A

RoHS Status :

ROHS3 Compliant

Rise Time :

11ns

Peak Reflow Temperature (Cel) :

260

Series :

TrenchFET®

Width :

3.05mm

Packaging :

Tape and Reel (TR)

FET Feature :

Logic Level Gate

REACH SVHC :

Unknown

Element Configuration :

Dual

Height :

1.04mm

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Max Power Dissipation :

1.3W

Transistor Application :

SWITCHING

Number of Channels :

2

Power Dissipation :

2.6W

Transistor Element Material :

SILICON

Length :

3.05mm

Fall Time (Typ) :

11 ns

Factory Lead Time :

14 Weeks

ECCN Code :

EAR99

Package / Case :

PowerPAK® 1212-8 Dual

Continuous Drain Current (ID) :

25A

Nominal Vgs :

3.5 V

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

Threshold Voltage :

3.5V

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

100V

Case Connection :

DRAIN

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Resistance :

195mOhm

Rds On (Max) @ Id, Vgs :

195m Ω @ 2.5A, 10V

Published :

2009

Number of Pins :

8

Number of Elements :

2

Base Part Number :

SI7922

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

6

JESD-30 Code :

S-XDSO-C6

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

10A

Turn-Off Delay Time :

8 ns

Turn On Delay Time :

7 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

8

FET Type :

2 N-Channel (Dual)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lead Free :

Lead Free

Radiation Hardening :

No