SI6969DQ-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Width :

4.4mm

Published :

2015

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Element Configuration :

Dual

Turn On Delay Time :

25 ns

FET Feature :

Logic Level Gate

Rds On Max :

34 mΩ

Power - Max :

1.1W

Max Operating Temperature :

150°C

Drain to Source Breakdown Voltage :

-12V

Vgs(th) (Max) @ Id :

450mV @ 250μA (Min)

Mounting Type :

Surface Mount

Drain to Source Resistance :

34mOhm

RoHS Status :

ROHS3 Compliant

Weight :

157.991892mg

Number of Channels :

2

Packaging :

Tape and Reel (TR)

FET Type :

2 P-Channel (Dual)

Gate to Source Voltage (Vgs) :

8V

Supplier Device Package :

8-TSSOP

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 4.5V

Height :

1mm

Fall Time (Typ) :

40 ns

Length :

3mm

Series :

TrenchFET®

Rds On (Max) @ Id, Vgs :

34mOhm @ 4.6A, 4.5V

Continuous Drain Current (ID) :

4.6A

Max Power Dissipation :

1.1W

Min Operating Temperature :

-55°C

Rise Time :

35ns

Turn-Off Delay Time :

80 ns

Base Part Number :

SI6969

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

12V

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

8