SI6913DQ-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

900mV @ 400μA

FET Type :

2 P-Channel (Dual)

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Height :

1mm

Operating Temperature :

-55°C~150°C TJ

Width :

4.4mm

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

8V

Weight :

157.991892mg

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Base Part Number :

SI6913

JESD-609 Code :

e3

Series :

TrenchFET®

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

8

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

12V

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 4.5V

Lead Free :

Lead Free

Rise Time :

80ns

Factory Lead Time :

14 Weeks

Number of Terminations :

8

Number of Elements :

2

Turn On Delay Time :

45 ns

Packaging :

Tape and Reel (TR)

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Dual

Pbfree Code :

yes

Turn-Off Delay Time :

130 ns

Max Power Dissipation :

830mW

Length :

3mm

Rds On (Max) @ Id, Vgs :

21m Ω @ 5.8A, 4.5V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

4.9A

Power Dissipation :

830mW

FET Feature :

Logic Level Gate

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Fall Time (Typ) :

80 ns

Published :

2015

Mount :

Surface Mount