SI6925ADQ-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Packaging :

Tape and Reel (TR)

Base Part Number :

SI6925

Resistance :

45mOhm

Drain to Source Breakdown Voltage :

20V

Terminal Finish :

MATTE TIN

FET Feature :

Logic Level Gate

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

40

Max Power Dissipation :

800mW

Pin Count :

8

JESD-609 Code :

e3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

3.3A

Vgs(th) (Max) @ Id :

1.8V @ 250μA

Turn-Off Delay Time :

20 ns

Power Dissipation :

1W

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Element Configuration :

Dual

Terminal Form :

Gull wing

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

8

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

FET Type :

2 N-Channel (Dual)

Gate to Source Voltage (Vgs) :

12V

Fall Time (Typ) :

10 ns

Rise Time :

50ns

Rds On (Max) @ Id, Vgs :

45m Ω @ 3.9A, 4.5V

Radiation Hardening :

No

Mount :

Surface Mount

ECCN Code :

EAR99

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

20V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Turn On Delay Time :

40 ns

Operating Temperature :

-55°C~150°C TJ