SI6924AEDQ-T1-E3
- Mfr.Part #
- SI6924AEDQ-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-TSSOP (0.173, 4.40mm Width)
- Datasheet
- Download
- Description
- MOSFET 2N-CH 28V 4.1A 8-TSSOP
- Stock
- 32,762
- In Stock :
- 32,762
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Turn On Delay Time :
- 950 ns
- Power Dissipation :
- 1W
- Published :
- 2016
- Package / Case :
- 8-TSSOP (0.173, 4.40mm Width)
- Pin Count :
- 8
- Rise Time :
- 1.4μs
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 4.5V
- Rds On (Max) @ Id, Vgs :
- 33m Ω @ 4.6A, 4.5V
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 1W
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- Gull wing
- Terminal Finish :
- MATTE TIN
- Fall Time (Typ) :
- 1.4 μs
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Resistance :
- 33mOhm
- Drain to Source Breakdown Voltage :
- 28V
- Number of Elements :
- 2
- FET Type :
- 2 N-Channel (Dual) Common Drain
- Number of Terminations :
- 8
- Element Configuration :
- Dual
- Base Part Number :
- SI6924
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Number of Pins :
- 8
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 7 µs
- JESD-609 Code :
- e3
- Drain to Source Voltage (Vdss) :
- 28V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gate to Source Voltage (Vgs) :
- 14V
- FET Feature :
- Logic Level Gate
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 4.1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- SI6924AEDQ-T1-E3

SI6924AEDQ-T1-E3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available at
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