SI6924AEDQ-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pin Count :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

1W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

2 N-Channel (Dual) Common Drain

Gate to Source Voltage (Vgs) :

14V

Continuous Drain Current (ID) :

4.6A

Terminal Form :

Gull wing

Element Configuration :

Dual

Published :

2016

Base Part Number :

SI6924

Terminal Finish :

MATTE TIN

Turn On Delay Time :

950 ns

Transistor Element Material :

SILICON

FET Feature :

Logic Level Gate

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Turn-Off Delay Time :

7 µs

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Rds On (Max) @ Id, Vgs :

33m Ω @ 4.6A, 4.5V

ECCN Code :

EAR99

Rise Time :

1.4μs

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

28V

Number of Terminations :

8

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

4.1A

Number of Elements :

2

Drain Current-Max (Abs) (ID) :

4.1A

Mount :

Surface Mount

Pbfree Code :

yes

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Fall Time (Typ) :

3.1 μs

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.033Ohm

Power Dissipation :

1W