SI6969BDQ-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

12V

Element Configuration :

Dual

FET Type :

2 P-Channel (Dual)

Drain to Source Resistance :

30mOhm

Number of Channels :

2

FET Feature :

Logic Level Gate

Rds On (Max) @ Id, Vgs :

30mOhm @ 4.6A, 4.5V

Width :

4.4mm

Base Part Number :

SI6969

Series :

TrenchFET®

Rise Time :

35ns

Mount :

Surface Mount

Power - Max :

830mW

Turn On Delay Time :

20 ns

Weight :

157.991892mg

Height :

1mm

Current - Continuous Drain (Id) @ 25°C :

4A

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 4.5V

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Drain to Source Breakdown Voltage :

-12V

Max Power Dissipation :

830mW

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Min Operating Temperature :

-55°C

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

800mV @ 250μA

RoHS Status :

ROHS3 Compliant

Rds On Max :

30 mΩ

Turn-Off Delay Time :

110 ns

Gate to Source Voltage (Vgs) :

8V

Length :

3mm

Resistance :

30mOhm

Max Operating Temperature :

150°C

Fall Time (Typ) :

35 ns

Continuous Drain Current (ID) :

-4.6A

Supplier Device Package :

8-TSSOP

Published :

2015