SI6473DQ-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Published :

2009

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

42 ns

Mounting Type :

Surface Mount

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Rds On (Max) @ Id, Vgs :

12.5m Ω @ 9.5A, 4.5V

Height :

1mm

Transistor Element Material :

SILICON

Series :

TrenchFET®

Pin Count :

8

Fall Time (Typ) :

33 ns

Current - Continuous Drain (Id) @ 25°C :

6.2A Ta

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 5V

Length :

3mm

Rise Time :

33ns

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Width :

4.4mm

Gate to Source Voltage (Vgs) :

8V

Number of Elements :

1

Power Dissipation :

80mW

FET Type :

P-Channel

Qualification Status :

Not Qualified

Vgs (Max) :

±8V

Drain to Source Voltage (Vdss) :

20V

Number of Terminations :

8

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Number of Pins :

8

Terminal Form :

Gull wing

JESD-609 Code :

e3

Number of Channels :

1

Turn-Off Delay Time :

220 ns

DS Breakdown Voltage-Min :

20V

Weight :

157.991892mg

Vgs(th) (Max) @ Id :

450mV @ 250μA (Min)

Resistance :

12.5mOhm

Power Dissipation-Max :

1.08W Ta

Continuous Drain Current (ID) :

6.2A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Terminal Finish :

MATTE TIN