SI6415DQ-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

Height :

1mm

Number of Channels :

1

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

8

Number of Pins :

8

REACH SVHC :

Unknown

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Resistance :

19mOhm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Transistor Element Material :

SILICON

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

-30V

Fall Time (Typ) :

17 ns

Length :

3mm

Contact Plating :

Tin

Peak Reflow Temperature (Cel) :

260

Weight :

157.991892mg

Power Dissipation-Max :

1.5W Ta

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Mount :

Surface Mount

JESD-609 Code :

e3

Lead Free :

Lead Free

Width :

4.4mm

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

19m Ω @ 6.5A, 10V

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

30A

Factory Lead Time :

14 Weeks

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

73 ns

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Turn On Delay Time :

16 ns

Rise Time :

17ns

Published :

2008

Packaging :

Tape and Reel (TR)

Power Dissipation :

1.5W

Pin Count :

8

FET Type :

P-Channel

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

30V

Pbfree Code :

yes

Continuous Drain Current (ID) :

6.5A

Series :

TrenchFET®

Threshold Voltage :

-1V